Etching and cleaning methods and etching and cleaning apparatuses used therefor

ABSTRACT

An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

This is a divisional of application Ser. No. 09/525,445 filed Mar. 14,2000 now U.S. Pat. No. 6,683,807; the disclosure of which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to etching and cleaning methods andetching and cleaning apparatuses used for semiconductor devicefabrication and more particularly, to etching and cleaning methods ofremoving an unnecessary or undesired material or materials from asemiconductor wafer and etching and cleaning apparatuses used forperforming the etching or cleaning method.

2. Description of the Prior Art

In the processes of fabricating semiconductor devices on a semiconductorwafer, various etching methods are usually used to remove unnecessary orundesired materials from the wafer and various cleaning methods areusually used to clean contaminants attached to the wafer or devices. Inthese cases, there is the need to remove unnecessary or undesiredmaterials existing on the surface peripheral area of the wafer, on theback peripheral area of the wafer, or on the end face of the wafer.

Here, the “end face” means the end face of the wafer located between itssurface and back and approximately perpendicular to them. The “surfaceperipheral area” means the area or region of the surface of the waferbetween the device area and the end face. The device area is an area orregion of the surface of the wafer in which desired semiconductordevices are formed. The “back peripheral area” means the area or regionof the back of the wafer in which an undesired or unnecessary materialor materials to be removed are present.

In recent years, copper (Cu) has been used as a wiring orinterconnection material instead of aluminum (Al), because Cu is higherin conductivity than Al. In this case, Cu wiring lines are typicallyformed in trenches of a silicon dioxide (SiO₂) film, which are usuallyrealized by the step of forming the trenches in the SiO₂ film, the stepof forming a Cu film on the SiO₂ film to cover the trenches byelectroplating, and the step of selectively removing the Cu film toleave the same in the trenches by Chemical Mechanical Polishing (CMP).This method is termed the “damascene process”.

Next, the damascene process for the Cu wiring lines is explained indetail.

First, trenches are formed in a SiO₂ film to have a pattern for desiredwiring lines by a known method, where the SiO₂ film is formed on or overa single-crystal silicon (Si) wafer or substrate. Second, a barriermetal film, which is made of meal such as tantalum (Ta) and tantalumnitride (TaN), is formed on the SiO₂ film to cover the trenches bysputtering. The barrier metal film is to prevent the Cu atoms fromdiffusing into the SiO₂ film. Third, a seed Cu film is formed on thebarrier metal film by sputtering. Fourth, a wiring Cu film is formed onthe seed Cu film by electroplating.

In the fourth step of forming the wiring Cu film by electroplating, aring-shaped blocking member is placed on the surface of the wafer tosurround the device area and then, a proper plating liquid or solutionis supplied to the inside of the member. At this time, there is apossibility that the plating liquid leaks out of the member. If leakageof the liquid occurs, the wiring Cu film is formed not only in thedevice area but also in the surface peripheral area of the wafer. Thewiring Cu film thus formed in the surface peripheral area is unnecessaryand to be removed. The unnecessary Cu film tends to be detached from theSiO₂ film in the subsequent process or processes due to stress tothereby contaminate the production lines of the semiconductor device,because of weak adhesion of the plated Cu film to the SiO₂ film. As aresult, the unnecessary Cu film needs to be removed.

Moreover, after the CMP process is completed, the Si wafer iscontaminated by Cu wastes produced from the Cu film polished. The Cuwastes tend to diffuse into the SiO₂ film and the Si wafer due tosubsequent heat treatment, thereby badly affecting the performance ofthe semiconductor devices formed in the device area. Since the Cu wastesadhere onto the surface and back peripheral areas and the end face ofthe wafer, they are difficult to be removed therefrom. Thus, the Cuwastes need to be removed by cleaning.

When the Si wafer is 8 inches in diameter, the distance between the edgeof the device area and the end face of the wafer is typically set as,for example, approximately 5 mm. To expand the device area, it ispreferred that the SiO₂ film (in which the Cu wiring lines are formed)is formed on the wafer to be expanded until the distance between theedge of the SiO₂ film and the end face is decreased to 1.5 mm to 2.0 mm.In this case, however, when the seed Cu film is deposited onto thebarrier metal film over the whole wafer by sputtering in order to coverthe whole SiO₂ film, it tends to cover not only the device area but alsothe surface and back peripheral areas and the end face of the wafer.Thus, if the plating liquid or solution supplied to the inside of thering-shaped blocking member leaks out, the wiring Cu film tends to beformed on the seed film not only in the device area but also in thesurface and back peripheral areas and the end face.

Since the wiring Cu film is formed on the seed Cu film, it is notseparated or stripped off. However, the wiring Cu film existing on theend face of the wafer tends to be adhered onto the wafer carriers and/orthe robot arms during transportation processes in the semiconductordevice fabrication system. Thus, it tends to contaminate thetransportation subsystem. This means that the wiring Cu film existing onthe surface and back peripheral areas and the end face of the waferneeds to be removed before the wafer is transported to the next stage.

Furthermore, the removal of the above-described wiring Cu film requiresgood controllability. This is because the distance between the edge ofthe SiO₂ film and the end face is as short as 1.5 mm to 2 mm. Thecleaning of the above-described Cu contaminants generated in the CMPprocess also necessitates similar good controllability.

To remove the undesired or unnecessary Cu film or contaminants explainedabove, various etching and cleaning methods have been developed anddisclosed, two examples of which are shown in FIGS. 1 and 2.

In the prior-art cleaning/etching method as shown in FIG. 1, aprotection film 112 having an etch-resistant property is selectivelyformed on the surface 110A of a semiconductor wafer 110 to cover theentire device area formed thereon. Then, the wafer 110 with the film 112is entirely immersed into an etching solution 114 stored in a suitablecontainer 113, thereby etching selectively the exposed area of the wafer110. Thus, the exposed area is cleaned. Thereafter, the film 112 isremoved from the wafer 110.

As the etching solution 114, for example, a mixture of hydrogen fluoride(HF), hydrogen peroxide (H₂O₂), and water (H₂O), which is often termed“Fluoric-Peroxide Mixture (FPM)”, may be used.

In the prior-art cleaning/etching method as shown in FIG. 2, asemiconductor wafer 110 is rotated in a horizontal plane by a properrotating means while it is turned upside down. In this state, an etchingsolution 114 (e.g., FPM) is supplied downward toward the center of theback 110B of the wafer 110. At the same time as this, a protection gas115 (e.g., nitrogen gas, N₂) is supplied upward toward the center of thesurface 110A of the wafer 110.

The solution 114 thus supplied onto the back 110B moves outward to theend face 110C of the wafer 110 along the back 110B and then, flows alongthe vertical end face 110C, and drops from the end face 110C. Part ofthe solution 114 reaches the periphery of the surface 110A and then, itis dropped therefrom.

The protection gas 115 thus supplied to the surface 110A keeps thedevice area not to be contacted with the etching solution 114. Thesolution 114 selectively etches the back 110B, the end face 110C, andthe periphery of the surface 110A, thereby cleaning them.

With the prior-art cleaning/etching method as shown in FIG. 1, there isa disadvantage that some contrivance is required for the protection film112 not to be formed in the periphery of the surface 110A of the wafer110. Also, it is essential that the semiconductor devices and wiringlines formed in the device area are not damaged by removal of theprotection film 112 form the surface 110A. However, this is difficult tobe realized. If the protection film 112 is made of a resist material,the number of the necessary process steps is increased.

With the prior-art cleaning/etching method as shown in FIG. 2, the flowof the etching solution 114 toward the back 110B of the wafer 110 iscontrolled by the rotation speed of the wafer 110 and the flow rate ofthe protection gas 115 toward the surface 110A. Thus, thecontrollability is low.

Furthermore, the circular edge of the flowing solution 114, which isdefined by contact or collision of the solution 114 with the gas 115 andextends along the edge of the wafer 110, tends to wave or fluctuate. Asa result, the solution 114 may reach the device area at some location toetch the same. Alternately, the solution 114 does not contact with theperiphery of the surface 110A at some location, leaving the undesiredmaterial thereon.

As a result, the prior-art cleaning/etching method shown in FIG. 2 isunable to be applied to the case where the distance between the edge ofthe device area and the end face of the wafer is as short as 1.5 mm to2.0 mm.

SUMMARY OF THE INVENTION

Accordingly, an object of the present invention is to provide an etchingmethod and an etching apparatus that make it possible to effectivelyremove an unnecessary material or materials existing on a semiconductorwafer without damaging the device area.

Another object of the present invention is to provide an etching methodand an etching apparatus that make it possible to effectively remove anunnecessary material or materials existing on a semiconductor wafer withgood controllability.

Still another object of the present invention is to provide an etchingmethod and an etching apparatus that removes effectively an unnecessarymaterial or materials existing on a semiconductor wafer even if thedistance between the edge of the device area and the end face of thewafer is as short as approximately 1.5 mm to 2.0 mm.

A further object of the present invention is to provide a cleaningmethod and a cleaning apparatus that make it possible to effectivelyclean a semiconductor wafer without damaging the device area.

A still further object of the present invention is to provide a cleaningmethod and a cleaning apparatus that make it possible to effectivelyclean a semiconductor wafer with good controllability.

A still further object of the present invention is to provide a cleaningmethod and a cleaning apparatus that cleans effectively a semiconductorwafer even if the distance between the edge of the device area and theend face of the wafer is as short as approximately 1.5 mm to 2.0 mm.

The above objects together with others not specifically mentioned willbecome clear to those skilled in the art from the following description.

According to a first aspect of the present invention, an etchingapparatus is provided, which is comprised of:

(a) a rotating means for holding a semiconductor wafer and for rotatingthe wafer in a horizontal plane;

the wafer having a device area and a surface peripheral area on itssurface;

the surface peripheral area being located outside the device area; and

(b) an edge nozzle for emitting an etching liquid toward a surfaceperipheral area of the wafer.

The etching liquid emitted from the edge nozzle selectively etches outan unnecessary material existing in the surface peripheral area of thewafer.

With the etching apparatus according to the first aspect of the presentinvention, the edge nozzle emits the etching liquid toward the surfaceperipheral area of the wafer while rotating the wafer in a horizontalplane. Thus, the etching liquid emitted to the surface peripheral areadoes not move inward due to a centrifugal force generated by rotation ofthe wafer. As a result, the unnecessary material existing in the surfaceperipheral area of the wafer is effectively removed without damaging thedevice area of the wafer.

Moreover, the emission of the etching liquid is controlled by therotation speed of the wafer and the flow rate of the liquid andtherefore, the etching action can be carried out with goodcontrollability. This means that even if the distance between the edgeof the device area and the end face of the wafer is as short asapproximately 1.5 mm to 2.0 mm, the unnecessary material existing on thewafer can be removed effectively.

In a preferred embodiment of the etching apparatus according to thefirst aspect of the invention, the etching liquid emitted from the edgenozzle has an emission direction oriented along a rotation direction ofthe wafer or outward with respect to a tangent of the wafer formed neara contact point of the liquid with the surface peripheral area of thewafer.

In another preferred embodiment of the etching apparatus according tothe first aspect of the invention, a back nozzle is additionallyprovided. The back nozzle emits an etching liquid toward a back centerof the wafer. The etching liquid emitted from the back nozzle etches outan unnecessary material existing on a back of the wafer. In thisembodiment, there is an additional advantage that not only theunnecessary material existing in the surface peripheral area of thewafer but also that existing on the back of the wafer can be removedsimultaneously.

In still another preferred embodiment of the etching apparatus accordingto the first aspect of the invention, a surface nozzle is additionallyprovided. The surface nozzle emits a protecting liquid toward a surfacecenter of the wafer. The protecting liquid emitted from the surfacenozzle covers the device area of the wafer to protect the same againstthe etching liquid emitted from the edge nozzle. In this embodiment,there is an additional advantage that the device area can be preventedfrom being damaged due to the etching liquid emitted from the edgenozzle even if part of the etching liquid is jumped into the device areafrom the surface peripheral area.

In a further preferred embodiment of the etching apparatus according tothe first aspect of the invention, a back nozzle and a surface nozzleare additionally provided. The back nozzle emits an etching liquidtoward a back center of the wafer. The etching liquid emitted from theback nozzle etches out an unnecessary material existing on a back of thewafer. The surface nozzle emits a protecting liquid toward a surfacecenter of the wafer. The protecting liquid emitted from the surfacenozzle covers the device area of the wafer to protect the same againstthe etching liquid emitted from the edge nozzle.

In a still further preferred embodiment of the etching apparatusaccording to the first aspect of the invention, the etching liquidemitted from the edge nozzle is beam-shaped. In this embodiment, thereis an additional advantage that the controllability is further improved.

The rotating means may be in any form if it can hold the semiconductorwafer and rotate it in a horizontal plane. However, it is preferred thatthe rotating means may be in any one of the following forms.

The rotating means may be of a roller-chucking type, in which the meanscomprises rollers arranged along an end face of the wafer. The rollersare contacted with the end face of the wafer to hold the wafer androtated synchronously.

The rotating means may be of a pin-chucking type, in which the meanscomprises pins supported by a supporting member and arranged along anend face of the wafer. The pins are contacted with the end face of thewafer to hold the wafer and rotated synchronously by the member.

The rotating means may be of a pin-chucking type, in which the meanscomprises a first plurality of pins and a second plurality of pinssupported by a supporting member. The first plurality of pins and thesecond plurality of pins are alternately arranged along an end face ofthe wafer. The first plurality of pins and the second plurality of pinsare alternately contacted with the end face of the wafer to hold thewafer and rotated synchronously by the member.

The rotating means may be of a pin-chucking type, in which the meanscomprises a first plurality of pins and a second plurality of pinssupported by a supporting member. The first plurality of pins arearranged along an end face of the wafer. The second plurality of pinsare arranged along the end face of the wafer. The first plurality ofpins are contacted with the end face of the wafer to hold the wafer androtated synchronously by the member in a period. The second plurality ofpins are contacted with the end face of the wafer to hold the wafer androtated synchronously by the member in another period.

According to a second aspect of the present invention, a cleaningapparatus is provided, which is comprised of:

(a) a rotating means for holding a semiconductor wafer and for rotatingthe wafer in a horizontal plane;

the wafer having a device area and a surface peripheral area on itssurface;

the surface peripheral area being located outside the device area; and

(b) an edge nozzle for emitting a cleaning liquid toward a surfaceperipheral area of the wafer.

The cleaning liquid emitted from the edge nozzle selectively removes anunnecessary material existing in the surface peripheral area of thewafer.

With the cleaning apparatus according to the second aspect of thepresent invention, the edge nozzle emits the cleaning liquid toward thesurface peripheral area of the wafer while rotating the wafer in ahorizontal plane. Thus, the cleaning liquid emitted to the surfaceperipheral area does not move inward due to a centrifugal forcegenerated by rotation of the wafer. As a result, the unnecessarymaterial existing in the surface peripheral area of the wafer iseffectively removed without damaging the device area of the wafer.

Moreover, the emission of the cleaning liquid is controlled by therotation speed of the wafer and the flow rate of the liquid andtherefore, the cleaning action can be carried out with goodcontrollability. This means that even if the distance between the edgeof the device area and the end face of the wafer is as short asapproximately 1.5 mm to 2.0 mm, the unnecessary material or materialsexisting on the wafer can be removed effectively.

In a preferred embodiment of the cleaning apparatus according to thesecond aspect of the invention, the cleaning liquid emitted from theedge nozzle has an emission direction oriented along a rotationdirection of the wafer or outward with respect to a tangent of the waferformed near a contact point of the liquid with the surface peripheralarea of the wafer.

In another preferred embodiment of the cleaning apparatus according tothe second aspect of the invention, a back nozzle is additionallyprovided. The back nozzle emits a cleaning liquid toward a back centerof the wafer. The cleaning liquid emitted from the back nozzle removesan unnecessary material existing on a back of the wafer. In thisembodiment, there is an additional advantage that not only theunnecessary material existing in the surface peripheral area of thewafer but also that existing on the back of the wafer can be removedsimultaneously.

In still another preferred embodiment of the cleaning apparatusaccording to the second aspect of the invention, a surface nozzle isadditionally provided. The surface nozzle emits a protecting liquidtoward a surface center of the wafer. The protecting liquid emitted fromthe surface nozzle covers the device area of the wafer to protect thesame against the cleaning liquid emitted from the edge nozzle. In thisembodiment, there is an additional advantage that the device area can beprevented from being damaged due to the cleaning liquid emitted from theedge nozzle even if part of the cleaning liquid is jumped into thedevice area from the surface peripheral area.

In a further preferred embodiment of the cleaning apparatus according tothe second aspect of the invention, a back nozzle and a surface nozzleare additionally provided. The back nozzle emits a cleaning liquidtoward a back center of the wafer. The cleaning liquid emitted from theback nozzle removes an unnecessary material existing on a back of thewafer. The surface nozzle emits a protecting liquid toward a surfacecenter of the wafer. The protecting liquid emitted from the surfacenozzle covers the device area of the wafer to protect the same againstthe cleaning liquid emitted from the edge nozzle.

In a still further preferred embodiment of the cleaning apparatusaccording to the second aspect of the invention, the cleaning liquidemitted from the edge nozzle is beam-shaped. In this embodiment, thereis an additional advantage that the controllability is further improved.

In the cleaning apparatus according to the second aspect of theinvention also, the rotating means may be in any form if it can hold thesemiconductor wafer and rotate it in a horizontal plane. However, it ispreferred that the rotating means may be in any one of the followingforms as described about the etching apparatus according to the firstaspect.

According to a third aspect of the present invention, an etching methodis provided, which is comprised of the steps of:

(a) rotating a semiconductor wafer in a horizontal plane;

the wafer having a device area and a surface peripheral area on itssurface;

the surface peripheral area being located outside the device area; and

(b) emitting an etching liquid toward a surface peripheral area of thewafer by an edge nozzle, thereby selectively etching out an unnecessarymaterial existing in the surface peripheral area.

With the etching method according to the third aspect of the presentinvention, because of the same reason as described about the etchingapparatus according to the first aspect, the unnecessary materialexisting in the surface peripheral area of the wafer is effectivelyremoved without damaging the device area of the wafer. Also, the etchingaction can be carried out with good controllability. Thus, even if thedistance between the edge of the device area and the end face of thewafer is as short as approximately 1.5 mm to 2.0 mm, the unnecessarymaterial existing on the wafer can be removed effectively.

In a preferred embodiment of the etching method according to the thirdaspect of the invention, the etching liquid emitted from the edge nozzlehas an emission direction oriented along a rotation direction of thewafer or outward with respect to a tangent of the wafer formed near acontact point of the liquid with the surface peripheral area of thewafer.

In another preferred embodiment of the etching method according to thethird aspect of the invention, an etching liquid is emitted toward aback center of the wafer by a back nozzle, thereby etching out anunnecessary material existing on a back of the wafer. In thisembodiment, there is an additional advantage that not only theunnecessary material existing in the surface peripheral area of thewafer but also that existing on the back of the wafer can be removedsimultaneously.

In still another preferred embodiment of the etching method according tothe third aspect of the invention, a protecting liquid is emitted towarda surface center of the wafer by a surface nozzle, thereby covering thedevice area of the wafer to protect the same against the etching liquidemitted from the edge nozzle. In this embodiment, there is an additionaladvantage that the device area can be prevented from being damaged dueto the etching liquid emitted from the edge nozzle even if part of theetching liquid is jumped into the device area from the surfaceperipheral area.

In a further preferred embodiment of the etching method according to thethird aspect of the invention, an etching liquid is emitted toward aback center of the wafer by a back nozzle, thereby etching out anunnecessary material existing on a back of the wafer, and a protectingliquid is emitted toward a surface center of the wafer by a surfacenozzle, thereby covering the device area of the wafer to protect thesame against the etching liquid emitted from the edge nozzle.

In a still further preferred embodiment of the etching method accordingto the third aspect of the invention, the etching liquid emitted fromthe edge nozzle is beam-shaped. In this embodiment, there is anadditional advantage that the controllability is further improved.

According to a fourth aspect of the present invention, a cleaning methodis provided, which is comprised of the steps of:

(a) rotating a semiconductor wafer in a horizontal plane;

the wafer having a device area and a surface peripheral area on itssurface;

the surface peripheral area being located outside the device area; and

(b) emitting a cleaning liquid toward a surface peripheral area of thewafer by an edge nozzle, thereby selectively removing an unnecessarymaterial existing in the surface peripheral area.

With the cleaning method according to the fourth aspect of the presentinvention, because of the same reason as described about the cleaningapparatus according to the second aspect, the unnecessary materialexisting in the surface peripheral area of the wafer is effectivelyremoved without damaging the device area of the wafer. Also, thecleaning action can be carried out with good controllability. Thus, evenif the distance between the edge of the device area and the end face ofthe wafer is as short as approximately 1.5 mm to 2.0 mm, the unnecessarymaterial existing on the wafer can be removed effectively.

In a preferred embodiment of the cleaning method according to the fourthaspect of the invention, the cleaning liquid emitted from the edgenozzle has an emission direction oriented along a rotation direction ofthe wafer or outward with respect to a tangent of the wafer formed neara contact point of the liquid with the surface peripheral area of thewafer.

In another preferred embodiment of the cleaning method according to thefourth aspect of the invention, a cleaning liquid is emitted toward aback center of the wafer by a back nozzle, thereby etching out anunnecessary material existing on a back of the wafer. In thisembodiment, there is an additional advantage that not only theunnecessary material existing in the surface peripheral area of thewafer but also that existing on the back of the wafer can be removedsimultaneously.

In still another preferred embodiment of the cleaning method accordingto the fourth aspect of the invention, a protecting liquid is emittedtoward a surface center of the wafer by a surface nozzle, therebycovering the device area of the wafer to protect the same against thecleaning liquid emitted from the edge nozzle. In this embodiment, thereis an additional advantage that the device area can be prevented frombeing damaged due to the cleaning liquid emitted from the edge nozzleeven if part of the cleaning liquid is jumped into the device area fromthe surface peripheral area.

In a further preferred embodiment of the cleaning method according tothe fourth aspect of the invention, a cleaning liquid is emitted towarda back center of the wafer by a back nozzle, thereby removing anunnecessary material existing on a back of the wafer, and a protectingliquid is emitted toward a surface center of the wafer by a surfacenozzle, thereby covering the device area of the wafer to protect thesame against the cleaning liquid emitted from the edge nozzle.

In a still further preferred embodiment of the cleaning method accordingto the fourth aspect of the invention, the cleaning liquid emitted fromthe edge nozzle is beam-shaped. In this embodiment, there is anadditional advantage that the controllability is further improved.

BRIEF DESCRIPTION OF THE DRAWINGS

In order that the present invention may be readily carried into effect,it will now be described with reference to the accompanying drawings.

FIG. 1 is a schematic view showing a prior-art etching/cleaning methodof a semiconductor wafer.

FIG. 2 is a schematic view showing another prior-art etching/cleaningmethod of a semiconductor wafer.

FIG. 3 is a schematic plan view showing the configuration of anetching/cleaning apparatus according to a first embodiment of theinvention.

FIG. 4 is a schematic side view showing the configuration of theapparatus according to the first embodiment of FIG. 3.

FIG. 5 is a schematic perspective view showing a holding structure ofthe wafer used in the apparatus according to the first embodiment ofFIG. 3.

FIG. 6 is a schematic side view showing the holding structure of thewafer shown in FIG. 5.

FIG. 7 is a schematic perspective view showing another holding structureof the wafer used in an etching/cleaning apparatus according to a secondembodiment of the invention.

FIG. 8 is a schematic side view showing the holding structure of thewafer shown in FIG. 7.

FIG. 9 is a schematic perspective view showing a further holdingstructure of the wafer used in an etching/cleaning apparatus accordingto a third embodiment of the invention.

FIG. 10 is a schematic side view showing the holding structure of thewafer shown in FIG. 9.

FIG. 11 is a flow chart showing the steps of forming Cu wiring linesusing the damascene process, in which one of the etching/cleaningapparatuses according to the first to third embodiments of the inventionis used.

FIGS. 12A to 12F are schematic, partial cross-sectional views of asemiconductor wafer showing the formation steps of the Cu wiring lines,respectively, which includes an etching method and a cleaning methodaccording to a fourth embodiment of the invention.

FIG. 13 is a graph showing the composition dependence of the etchselectivity between Cu and SiO₂ of FPM.

FIGS. 14A to 14F are schematic, partial cross-sectional views of asemiconductor wafer showing the formation steps of the Cu wiring lines,respectively, which includes an etching method and a cleaning methodaccording to a fifth embodiment of the invention.

FIGS. 15A to 15F are schematic, partial cross-sectional views of asemiconductor wafer showing the formation steps of the Cu wiring lines,respectively, which includes an etching method and a cleaning methodaccording to a sixth embodiment of the invention.

FIG. 16 is a schematic cross-sectional view of a semiconductor wafer,which shows the various areas of the wafer used in the etching orcleaning method according to the invention.

FIG. 17 is a schematic cross-sectional view of a semiconductor wafer,which shows the flowing state of the etching or cleaning liquid and theprotecting liquid used in the etching or cleaning method according tothe invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described indetail below while referring to the drawings attached.

First Embodiment

An etching/cleaning apparatus according to a first embodiment has aconfiguration as shown in FIGS. 3 and 4. This apparatus serves as anetching apparatus when an etching liquid is supplied and as a cleaningapparatus when a cleaning liquid is supplied.

The etching/cleaning apparatus shown in FIGS. 3 and 4 is comprised of asurface nozzle 14 for emitting a protecting liquid L_(P) toward thesurface center P1 of the surface 10A of a circular single-crystal Siwafer 10, a back nozzle 16 for emitting an etching liquid L_(E) or acleaning liquid L_(C) toward the back center P2 of the back 10B of thewafer 10, and an edge nozzle 18 for emitting the etching or cleaningliquid L_(E) or L_(C) toward the edge of the wafer 10.

As shown in FIG. 16, the wafer 10 has the flat surface 10A, the flatback 10B, and the end face 10C extending along the periphery of thewafer 10 between the surface 10A and the back 10B. The wafer 10 furtherhas a device area 10D in the surface 10A. Various semiconductor devicesand elements and their wiring lines are formed in the device area 10D.The surface peripheral area 10E, which has an approximatelycircular-ringed shape, is formed on the surface 10A to extend along theend face 10C between the device area 10D and the end face 10C.

On the back 10B of the wafer 10, the back peripheral area 10F is formed,in which an undesired or unnecessary material or materials to be removedare present. Similar to the surface peripheral area 10E, the backperipheral area 10F has an approximately circular-ringed shape.

The location and the angle with respect to the wafer 10 of these nozzles14, 16, and 18 are changed dependent on the size or diameter of thewafer 10. For example, to cope with the wafer 10 with 150 mm, 200 mm, or300 mm in diameter, the following setting is preferred. If thesesettings are taken, the objects of the invention can be easilyaccomplished.

Returning to FIGS. 3 and 4, the height H₁ of the end of the surfacenozzle 14 from the surface 10A of the wafer 10 is preferably set as avalue in the range of 10 mm to 100 mm. The height H₂ of the end of theback nozzle 16 from the back 10B of the wafer 10 is preferably set as avalue in the range of 10 mm to 100 mm. The height H₃ of the end of theedge nozzle 18 from the surface 10A is preferably set as a value in therange of 5 mm to 50 mm. In this embodiment, H₁ is set as 50 mm, H₂ isset as 50 mm, and H₃ is set as 10 mm.

The distance L₁ of the end of the surface nozzle 14 from the surfacecenter P1 of the wafer 10 is preferably set as a value in the range of70 mm to 200 mm. The distance L₂ of the end of the back nozzle 16 fromthe back center P2 of the wafer 10 is preferably set as a value in therange of 70 mm to 200 mm. The distance L₃ of the end of the edge nozzle18 from the point P3 where the longitudinal axis of the nozzle 18intersects the surface 10A of the wafer 10 is preferably set as a valuein the range of 1 mm to 50 mm. Within these ranges, the objects of theinvention can be easily accomplished. In this embodiment, L₁ is set as120 mm, L₂ is set as 120 mm, and L₃ is set as 10 mm.

The angle θ₁ of the surface nozzle 14 from the surface 10A is preferablyset as a value in the range of 15° to 60°. The angle θ₂ of the backnozzle 16 from the back 10B is preferably set as a value in the range of15° to 60°. The angle θ₃ of the edge nozzle 18 from the surface 10A ispreferably set as a value in the range of 10° to 50°. In thisembodiment, θ₁ is set as 45°, θ₂ is set as 45°, and θ₃ is set as 35°.

The angle θ₄ of the edge nozzle 18 with respect to the tangent 20 of thewafer 10 at the point P3 where the longitudinal axis of the nozzle 18intersects the end face 10C (i.e., the edge) of the wafer 10 ispreferably set as a value in the range of 0° to 90°. In this embodiment,θ₄ is set as 45°. The value of the angle θ₄ is determined in such a waythat the etching or cleaning liquid L_(E) or L_(C) emitted from thenozzle 18 does not flow inwardly from the surface peripheral area 10E.

The protecting liquid L_(P) is emitted from the surface nozzle 14 towardthe surface center P1 of the wafer 10. Since the wafer 10 is rotated ata specific speed in a horizontal plane during operation, the liquidL_(P) is affected by a centrifugal force caused by the rotation. Thus,the liquid L_(P) moves outward from the vicinity of the center P1 alongthe surface 10A, covering entirely the device area 10D for protectionagainst the etching or cleaning liquid L_(E) or L_(C) emitted from theedge nozzle 18. The flowing state of the liquid L_(P) is shown in FIG.17.

The etching or cleaning liquid L_(E) or L_(C) is emitted from the edgenozzle 18 toward the surface peripheral area 10E or the edge of thewafer 10. Thus, the liquid L_(E) or L_(C) is selectively contacted withthe surface peripheral area 10E of the wafer 10. Due to the emissionorientation and the centrifugal force caused by the rotation, the liquidL_(E) or L_(C) does not enter the device area 10D and is dropped alongthe end face 10C, as shown in FIG. 17. Moreover, since the protectingliquid L_(p) emitted from the surface nozzle 14 covers the entire devicearea 14D, the separation of the device area 14D from the liquid L_(E) orL_(C) is ensured.

The etching or cleaning liquid L_(E) or L_(C) is emitted from the backnozzle 16 also, which is toward the back center P2 of the wafer 10.Thus, the liquid L_(E) or L_(C) can be contacted with the whole back10B. Due to the centrifugal force caused by the rotation of the wafer10, the liquid L_(E) or L_(C) moves outward from the center P2 along theback 10B and is dropped near the end face 10C, as shown in FIG. 17.

As seen from the above description, the protecting liquid L_(P) emittedfrom the surface nozzle 14 moves automatically from the surface centerP1 toward the edge of the wafer 10 due to the centrifugal force. Thus,the emission state of the liquid L_(P) may be optionally changed, if itprovides the desired function of covering or protecting the device area10D. For example, the liquid L_(P) may be emitted to form a beam, or itmay be emitted to form a suitable section or fan, or it may be sprayed.This is applicable to the etching or cleaning liquid L_(E) or L_(C)emitted from the back nozzle 16.

The emission state of the etching or cleaning liquid L_(E) or L_(C)emitted from the edge nozzle 18 needs to be contacted with the surfaceperipheral area 10E and the end face 10C of the wafer 10 withsatisfactory controllability, which must be accomplished withoutcontacting the liquid L_(E) or L_(C) with the device area 10D. From thispoint of view, for example, the etching or cleaning liquid L_(E) orL_(C) may be emitted to form a narrow beam with a diameter of 0.5 mm to2.0 mm. Alternately, it may be emitted to form a suitable section or fanextending along the edge of the wafer 10, or it may be selectivelysprayed toward a part of the area 10E.

The etching/cleaning apparatus according to the first embodimentcomprises a wafer-rotating mechanism, as shown in FIGS. 5 and 6. Thismechanism, which is of the roller-chucking type, includes four rollers22 connected to corresponding rotational shafts 24. The rollers 22 arearranged at equal intervals along the periphery of the wafer 10 in thesame horizontal plane. When the wafer 10 is held, the wafer 10 isengaged with the recesses 26 of the four rollers 22 to be placed in thehorizontal plane. Due to synchronous rotation of these rollers 22, thewafer 10 is rotated in the horizontal plane at a specific speed, asshown in FIGS. 5 and 6.

The number of the rollers 22 is four in this embodiment. However, it isnot limited thereto. It is preferably set as a number ranging from 3 to8.

With the wafer-holding mechanism of FIGS. 5 and 6, each roller 22 doesnot always contact with the end face 10C of the wafer 10 at the sameposition during operation. Thus, this mechanism is preferred for theetching or cleaning method of the wafer 10 according to the inventiondescribed later, where the whole end face 10C needs to be subjected tothe etching or cleaning action. Also, since the location of the rollers22 and the shafts 24 is fixed during operation, there is no possibilitythat the etching or cleaning liquid L_(E) or L_(C) emitted from the backnozzle 16 is blocked or stopped by the shafts 24. This means that therearises an additional advantage that the etching or cleaning liquid L_(E)or L_(C) is efficiently contacted with the back 10B of the wafer 10.

Although the number of the edge nozzle 18 is one in the firstembodiment, it is not limited thereto. The number of the nozzle 18 maybe two or more according to the necessity.

With the etching/cleaning apparatus according to the first embodiment ofFIGS. 3 to 6, the wafer-holding mechanism of FIGS. 5 and 6 is providedfor holding the wafer 10 in a horizontal plane and for rotating thewafer 10 at a specific rotation speed. Also, the surface nozzle 14 isprovided for emitting the protecting liquid L_(P) toward the surfacecenter P1 of the wafer 10, the back nozzle 16 is provided for emittingthe etching or cleaning liquid L_(E) or L_(C) toward the back center P2of the wafer 10, and the edge nozzle 18 is provided for emitting theetching or cleaning liquid L_(E) or L_(C) toward the edge of the wafer10.

Moreover, the etching or cleaning liquid L_(E) or L_(C) emitted from theedge nozzle 18 is controlled to contact with the surface peripheral area10E of the rotating wafer 10 and at the same time, the etching orcleaning liquid L_(E) or L_(C) emitted from the back nozzle 16 iscontrolled to contact entirely or partially with the back 10B of thesame wafer 10. The protecting liquid L_(P) emitted from the surfacenozzle 14 is controlled to cover the entire device area 10D of the wafer10 to protect the same against the etching or cleaning liquid L_(E) orL_(C) emitted from the edge nozzle 18.

Accordingly, the surface peripheral area 10E, the end face 10C, and theback 10B of the wafer 10 can be effectively etched or cleaned to removethe undesired or unnecessary material(s) or contaminant(s) existing onthe wafer 10, without applying any damages to the semiconductor deviceor elements and wiring lines in the device area 10D of the wafer 10.

Additionally, since the etching or cleaning liquid L_(E) or L_(C) can beemitted from the edge nozzle 18 as a liquid beam or liquid fan towardthe surface peripheral area 10E, the contact point of the liquid L_(E)or L_(C) with the area 10E can be set at satisfactory high precision. Asa result, the device area 10D can be expanded toward the edge or endface 10C of the wafer 10, thereby making the width of the area 10E(i.e., the distance between the areas 10D and 10E) as short as possible(e.g., approximately 1.5 mm to 2.0 mm).

Preferred examples of the etching liquid L_(E), the cleaning liquidL_(E), and the protecting liquid L_(P) are disclosed later.

Second Embodiment

FIGS. 7 and 8 show schematically a wafer-holding mechanism used in anetching/cleaning apparatus according to a second embodiment, which is avariation of the mechanism. The other configuration of the apparatusaccording to the second embodiment is the same as that of the apparatusaccording to the first embodiment of FIGS. 3 to 6. Thus, the explanationabout the same configuration is omitted here for the sake ofsimplification.

As shown in FIGS. 7 and 8, the wafer-holding mechanism is of thepin-chucking type, which includes four pins 30 joined to a rotationalsupporting member 28. The pins 30 are arranged at equal intervals alongthe circular edge of the member 28. Each pin 30 has a pocket 30A onwhich the edge of the wafer 10 is placed and engaged therewith. Thewafer 10 is placed and held on the four pockets 30A of the pins 30. Thewafer 10 is rotated in a horizontal plane due to the rotation of themember 28, as shown in FIGS. 7 and 8.

The number of the pins 30 is four in this embodiment. However, it is notlimited thereto and it may take any number. It is preferably set as anumber ranging from 3 to 8.

With the wafer-holding mechanism of FIGS. 7 and 8, unlike the mechanismof FIGS. 5 and 6 in the first embodiment, each pins 30 is kept contactedwith the end face 10C and the back 10B of the wafer 10 at the sameposition during operation. Thus, there is a problem that the parts ofthe end face 10C covered with the pins 30 are not etched or cleaned. Toavoid this problem, it is preferred that the chucking force of thewafer-holding mechanism is relaxed or released instantaneously and atthe same time, the rotation speed is lowered a bit during operation.Thus, the rotating wafer 10 can be shifted in its holding position dueto the inert force.

Alternately, the rotation of the wafer 10 may be temporarily stopped tolift the wafer 10 from the pins 30 with a proper handler (not shown) orthe like. In this case also, the holding position of the wafer 10 can beshifted or changed. Furthermore, two wafer-holding mechanisms of thepin-chucking type shown in FIGS. 7 and 8 may be provided for supportingthe wafer 10. In this case, a first one of the mechanisms is used tohold the wafer 10 and then, a second one of them is used therefor. Thus,the wafer 10 can be shifted in its holding position.

Needless to say, the apparatus according to the second embodiment hasthe same advantages as those in the apparatus according to the firstembodiment.

In addition, the wafer-holding mechanism of FIGS. 7 and 8 may becombined with the mechanism shown in FIGS. 5 and 6. In this case, therollers 22 may be contacted with the end face 10C of the wafer 10 duringa front half of an etching or cleaning process and then, the pins 30 maybe contacted with the end face 10C at different holding positions fromthose for the rollers 22 during a rear half of the process, and viceversa. Thus, the rotating wafer 10 can be shifted or switched in itsholding position during the same process without means for shifting theholding position of the wafer 10.

Third Embodiment

FIGS. 9 and 10 show schematically a wafer-holding mechanism used in anetching/cleaning apparatus according to a third embodiment, which isanother variation of the mechanism. Because the other configuration ofthe apparatus according to the third embodiment is the same as that ofthe apparatus according to the first embodiment, the explanation aboutthe same configuration is omitted here for the sake of simplification.

As shown in FIGS. 9 and 10, similar to the second embodiment, thewafer-holding mechanism is of the pin-chucking type. This mechanismincludes four pins 40 and four pins 41 joined to a rotational supportingmember 38. The pins 40 and 41 are alternately arranged at equalintervals along the circular edge of the member 38. Each pin 40 has apocket 40A on which the edge of the wafer 10 is placed and engagedtherewith. Each pin 41 has a similar pocket 41A on which the edge of thewafer 10 is placed and engaged therewith. When the wafer 10 is rotated,it is placed and held on the eight pockets 40A and 41A of the pins 40and 41. The wafer 10 is rotated in a horizontal plane due to therotation of the member 38, as shown in FIGS. 9 and 10.

The number of the pins 40 or 41 is four in this embodiment. However, itis not limited thereto and it may take any number. It is preferably setas 3.

With the wafer-holding mechanism of FIGS. 9 and 10, unlike the mechanismof FIGS. 7 and 8 in the second embodiment, the four pins 40 arecontacted with the end face 10C of the wafer 10 during a front half ofan etching or cleaning process. Then, the four pins 41 are contactedwith the end face 10C during a rear half of the process. Thus, therotating wafer 10 can be shifted or switched in its holding positionduring the same process. There is an additional advantage that the meansfor shifting the holding position of the wafer 10 is unnecessary.

Needless to say, the apparatus according to the third embodiment has thesame advantages as those in the apparatus according to the firstembodiment.

Fourth Embodiment

FIG. 11 shows the process flow of forming Cu wiring lines using thedamascene process and FIGS. 12A to 12F show the steps thereof,respectively, in which an etching method and a cleaning method accordingto a fourth embodiment are included. In this process, any one of theabove-explained etching/cleaning apparatuses according to the first tothird embodiments may be used.

In this process, it is needless to say that a lot of Cu wiring lines areformed. However, for simplification of description, only one of thewiring lines is explained and illustrated here.

In the step S1, a wiring trench is formed. Specifically, as shown inFIG. 12A, a silicon dioxide (SiO₂) film 34 is formed on the surface 10Aof the Si wafer 10 by a known method. The SiO₂ film 34 is formed tocover the whole device area 10D and to laterally protrude from the area10D. Thus, the periphery or edge of the SiO₂ film 34 is located withinthe surface peripheral area 10E. In this embodiment, the width of thesurface peripheral area 10E is set as approximately 5 mm.

Then, a wiring trench 36 is formed in the SiO₂ film 34 to be located inthe device area 10D by a known method. The state at this stage is shownin FIG. 12A.

In the step S2, a barrier metal film and a seed Cu film are formed. Thebarrier metal film is used to prevent the Cu atoms from diffusing intothe SiO₂ film 34 and/or the wafer 10. The seed Cu film is used to form aseed for plating.

Specifically, as shown in FIG. 12B, after the wafer 10 is placed on awafer stage 31 of a sputtering system, a barrier metal film 38, which ismade of Ta, TaN, or the like, is formed on the SiO₂ film 34 to cover thetrench 36 by sputtering. Subsequently, a seed Cu film 40 is formed onthe barrier metal film 38 to cover the trench 36 by sputtering. Thestate at this stage is shown in FIG. 12B.

The reference numeral 33 in FIG. 12B denotes a shield ring forpreventing the sputtered species from being deposited on the surfaceperipheral area 10E and the end face 10C of the wafer 10. The shieldring 33 is placed on the wafer stage 31 during the sputtering process.

In the step S3, a wiring Cu film is formed by electroplating.Specifically, a ring-shaped blocking member (i.e., a so-called O-ring,not shown) is placed on the SiO₂ film 34, forming a space on the seed Cufilm 40. Then, a proper plating liquid or solution is supplied to thespace, thereby forming a wiring Cu film 42 on the film 40, as shown inFIG. 12C.

At this stage, the plating liquid usually leaks out of the O-ring. Thus,an unnecessary Cu film 44 is formed on the SiO₂ film 34 in theperipheral area 10E. This film 44 is easily detached from the film 34and therefore, it will be a contaminant for the production lines. As aresult, the film 44 must be removed prior to the next process.

In the step S4, the unnecessary Cu film 44 is removed by etching usingthe above-explained etching/cleaning apparatus according to the first,second, or third embodiment. Since an etching liquid L_(E) is supplied,the above-explained etching/cleaning apparatus serves as an etchingapparatus.

Specifically, first, the wafer 10 with the films 34, 38, 40, 42, and 44is held to be in a horizontal plane by the wafer-holding mechanism.Next, a protecting liquid L_(P) is emitted from the surface nozzle 14toward the surface center P1 of the wafer 10, covering the whole devicearea 10D. As the protecting liquid L_(P), any liquid having no etchingaction to Cu, such as pure water or a water solution of any organic acidis used. Preferably, as the solution of an organic acid, a solution ofoxalic acid, citric acid, malonic acid, or the like is used, theconcentration of which is preferably set as 0.001% to 5%. This isbecause these solutions are easily accessible, easily removed, and applyno damage to the device area 10D.

In this embodiment, pure water is used as the protecting liquid L_(P).

At the same time as the emission of the protecting liquid L_(P), anetching liquid L_(E) is emitted from the edge nozzle 18 toward the edgeof the wafer 10, covering the whole surface peripheral area 10E. As theetching liquid L_(E), any liquid having a large etch selectivity(Cu/SiO₂) is used, because the unnecessary Cu film 44 existing in thearea 10E needs to be selectively etched while the SiO₂ film 34 isprevented from being etched.

Preferably, as the etching liquid L_(E), any acid or any alkali solutioncontaining H₂O₂ may be used. For example, FPM (HF/H₂O₂/H₂O), SPM(H₂SO₄/H₂O₂/H₂O), HPM (HCl/H₂O₂/H₂O), water solution of nitric hydrogenperoxide (HNO₃/H₂O₂/H₂O), APM (NH₄OH/H₂O₂/H₂O), thick nitric acid(HNO₃), or the like, is preferred. This is because these liquids providesatisfactorily high etch selectivity between Cu and SiO₂ and they areeasily accessible.

These solutions have a suitable composition providing a high etchselectivity (Cu/SiO₂) in the following way.

HF:H₂O₂:H₂O=1-10:1-20:100

H₂SO₄:H₂O₂:H₂O=1-10:1-20:100

HCl:H₂O₂:H₂O=1-10:1-20:100

HNO₃:H₂O₂:H₂O=1-10:1-20:100

NH₄OH:H₂O₂:H₂O=1-10:1-20:100

HNO₃=30%-80%

As an example, the composition dependence of the etch selectivity(Cu/SiO₂) of FPM is shown in FIG. 13. As seen from this figure, the etchselectivity (Cu/SiO₂) of FPM is maximized to about 250 at thecomposition ratio of HF:H₂O₂:H₂O=1:10:100.

In the fourth embodiment, FPM is used as the etching liquid P_(E)emitted from the edge nozzle 18.

While the wafer 10 is rotated in a horizontal plane by the wafer-holdingmechanism, pure water (i.e., the protecting liquid L_(P)) is emittedfrom the surface nozzle 14 and FPM (i.e., the etching liquid L_(E)) isemitted from the edge nozzle 18. The pure water supplied to the vicinityof the surface center P1 of the wafer 10 automatically expands towardthe edge of the wafer 10 along the surface 10A due to the centrifugalforce, thereby covering the entire device area 10D. The FPM supplied inthe surface peripheral area 10E moves toward the edge of the wafer 10along the surface 10A due to the centrifugal force, thereby contactingwith the entire area 10E. Thus, even if the FPM emitted from the nozzle18 is slightly returned or jumped toward the device area 10D due to therotational movement of the wafer 10, there is no possibility that theFPM is contacted with the device area 10D because of the pure water. Asa result, the wiring Cu film 42 and the SiO₂ film 34 are prevented frombeing damaged by the FPM.

Moreover, the FPM is emitted from the edge nozzle 18 as a beam. Thus,the contact point of the FPM beam with the surface 10A can be correctlyadjusted, which realizes correct removal of the unnecessary Cu film 44in the area 10E with satisfactory controllability. The state at thisstage is shown in FIG. 12D, where the Cu film 44 is entirely removed andthe edges of the films 38, 40, and 42 located outside the device area10D are removed.

In the step S5, the remaining wiring Cu film 42 in the device area 10Dis annealed by a known method, thereby improving the quality of the film42.

In the step S6, to selectively remove the wiring Cu film 42, the seed Cufilm 40, and the barrier metal film 38 protruding from the trench 36 ofthe SiO₂ film 34, a CMP process is carried out. Thus, as shown in FIG.12E, a Cu wiring line 46 is formed in the trench 36 and at the sametime, the seed Cu film 40 and the barrier metal film 38 are left in thetrench 36.

Through this CMP process, a polishing waste 48 is attached on thesurface 10A in the peripheral area 10E, on the end face 10C, and theback 10B of the wafer 10. In this embodiment, the waste 48 is made of Cuand the barrier metal.

In the step S7, the polishing waste 48 is removed using theabove-explained etching/cleaning apparatus according to the first,second, or third embodiment. Since a cleaning liquid L_(C) is supplied,the above-explained etching/cleaning apparatus serves as a cleaningapparatus.

Specifically, first, the wafer 10 is held on the wafer-holdingmechanism. Next, while the wafer 10 is rotated in a horizontal plane bythe wafer-holding mechanism, pure water (i.e., the protecting liquidL_(P)) is emitted from the surface nozzle 14 toward the surface centerP1 of the wafer 10, covering the whole device area 10D. At the same timeas this, FPM (i.e., the cleaning liquid L_(C)) is emitted from the edgenozzle 18 toward the edge of the wafer 10 to cover the whole surfaceperipheral area 10E while FPM is emitted from the back nozzle 16 towardthe back center P2 of the wafer 10 to cover the whole back 10B.

The pure water supplied to the vicinity of the surface center P1 movesoutward along the surface 10A due to the centrifugal force, covering andprotecting the entire device area 10D. The FPM supplied to the surfaceperipheral area 10E moves toward the edge of the wafer 10 along thesurface 10A to be dropped therefrom due to the centrifugal force,removing the polishing waste 48 existing in the area 10E and on the endface 10C. Thus, the surface peripheral area 10E and the end face 10C arefully cleaned.

On the other hand, the FPM supplied to the vicinity of the back centerP2 moves outward 10 along the back 10B to be dropped therefrom due tothe centrifugal force, removing the polishing waste 48 existing on theback 10B. Thus, the back 10B of the wafer 10 is fully cleaned.

Because the device area 10D is entirely covered with the pure waterduring the cleaning step S7, even if the FPM emitted from the nozzle 18is slightly returned toward the device area 10D due to the rotationalmovement of the wafer 10, there is no possibility that the FPM iscontacted with the device area 10D. As a result, the wiring Cu film 46and the SiO₂ film 34 are prevented from being damaged by the FPM.

The state after the cleaning step S7 is completed is shown in FIG. 12F.

As the cleaning liquid L_(C), similar to the etching liquid L_(E), anyacid or any alkali solution containing H₂O₂ may be used. This is becauseH₂O₂ has a good cleaning action of the polishing waste 48 of Cu. Forexample, SPM, HPM, water solution of nitric hydrogen peroxide, APM, orthick nitric acid may be preferred. These are easily accessible, easilyremovable, and apply no damage to the device area 10D.

As the protecting liquid L_(P), in addition to pure water, a watersolution of any organic acid that does not dissolves Cu maybe used. Forexample, a water solution of oxalic acid, citric acid, malonic acid, orthe like may be used. The concentration of the organic acid solution ispreferably set as 0.001% to 5%.

Fifth Embodiment

FIGS. 14A to 14F show the steps of a Cu wiring line formation processusing the damascene process, respectively, which includes an etchingmethod and a cleaning method according to a fifth embodiment. In thisprocess, any one of the above-explained etching/cleaning apparatusesaccording to the first to third embodiments is used.

In the fifth embodiment, to expand the device area 14D, the periphery ofthe area 10D is laterally shifted outward, thereby decreasing the widthof the surface peripheral area 10E compared with the fourth embodiment.The other conditions are the same as those of the above-described fourthembodiment.

In the step S1 of FIG. 11, as shown in FIG. 14A, a SiO₂ film 34 isformed on the surface 10A of the Si wafer 10 by a known method. The SiO₂film 34 is formed to cover the whole device area 10D and to protrudeslightly from the area 10D. Thus, the periphery of the SiO₂ film 34 islocated in the surface peripheral area 10E. In this embodiment, thewidth of the surface peripheral area 10E is set as approximately 2 mm.

Then, wiring trenches 36 are formed in the SiO₂ film 34 to be located inthe device area 10D by a known method. The state at this stage is shownin FIG. 14A.

In the step S2, as shown in FIG. 14B, the wafer 10 is placed on a waferstage 31′ of a sputtering system. The stage 31′ is smaller in size thanthe stage 31 used in the fourth embodiment. Then, a barrier metal film38, which is made of Ta, TaN, or the like, is formed on the SiO₂ film 34to cover the trenches 36 by sputtering using the shield ring 33 (notshown). Subsequently, a seed Cu film 40 is formed on the barrier metalfilm 38 to cover the trenches 36 by sputtering without the shield ring33. The state at this stage is shown in FIG. 14B.

As seen from FIG. 14B, unlike the fourth embodiment, the seed Cu film 40covers the whole end face 10C and part of the back 10B. This is becausethe width of the surface peripheral area 10E is very short and theshield ring 33 is not used.

In the step S3, a ring-shaped blocking member (i.e., a so-called O-ring,not shown) is placed on the seed Cu film 40, forming a space on the film40. Then, a proper plating liquid or solution is supplied to the spaceto thereby form a wiring Cu film 42 on the film 40 by electroplating, asshown in FIG. 14C.

At this stage, due to the leakage of the plating liquid, an unnecessaryCu film 44 is additionally formed on the seed Cu film 40 in theperipheral area 10E, as shown in FIG. 14C. This film 44 may affect theperformance of the semiconductor devices in the device area 10D and maybe contaminants and as a result, it must be removed prior to the nextprocess.

In the step S4, first, the wafer 10 is held on the wafer-holdingmechanism of the above-explained etching/cleaning apparatus according tothe first, second, or third embodiment and then, it is rotated in ahorizontal plane.

Next, pure water (i.e., the protecting liquid L_(P)) is emitted from thesurface nozzle 14 toward the surface center P1 of the rotating wafer 10,covering the whole device area 10D. At the same time as this, FPM (i.e.,the etching liquid L_(E)) is emitted from the edge nozzle 18 toward theedge of the wafer 10, covering the whole surface peripheral area 10E.Moreover, FPM is emitted from the back nozzle 16 toward the back centerP2 of the wafer 10, covering the whole back 10B. Thus, the wiring Cufilm 40 existing in the surface peripheral area 10E, on the end face10C, and in the back peripheral area 10F is entirely removed and at thesame time, the seed Cu film 40 located outside the device area 10D isentirely removed. The state at this stage is shown in FIG. 14D.

In the step S5, the remaining wiring Cu film 42 is annealed by a knownmethod, thereby improving the quality of the film 42.

In the step S6, to selectively remove the wiring Cu film 42, the seed Cufilm 40, and the barrier metal film 38 protruding from the trench 36 inthe SiO₂ film 34, a CMP process is carried out. Thus, as shown in FIG.14E, Cu wiring lines 46 are formed in the trenches 36 and at the sametime, the seed Cu film 40 and the barrier metal film 38 are left in thetrenches 36.

Through this CMP process, a polishing waste 48 is attached to thesurface 10A in the peripheral area 10E, on the end face 10C, and theback 10B of the wafer 10, as shown in FIG. 14E. In this embodiment, thewaste 48 is made of Cu and the barrier metal.

In the step S7, the polishing waste 48 is removed using theabove-explained etching/cleaning apparatus according to the first,second, or third embodiment.

Specifically, first, the wafer 10 is held on the wafer-holdingmechanism. Next, while the wafer 10 is rotated in a horizontal plane bythe mechanism, pure water (i.e., the protecting liquid L_(P)) is emittedfrom the surface nozzle 14 toward the surface center P1 of the wafer 10,covering the whole device area 10D. At this time, it is preferred toremove the Cu waste 48 existing on the device area 10D by supplyingtemporarily a proper organic acid to the device area 10D.

At the same time as the emission of the pure water, FPM (i.e., thecleaning liquid L_(C)) is emitted from the edge nozzle 18 toward theedge of the wafer 10 to cover the whole surface peripheral area 10Ewhile FPM is emitted from the back nozzle 16 toward the back center P2of the wafer 10 to cover the whole back 10B.

The pure water supplied to the vicinity of the surface center P1 of thewafer 10 moves outward, covering and protecting the entire device area10D. The FPM supplied to the vicinity of the edge of the wafer 10 movesoutward to be dropped therefrom, removing the polishing waste 48existing in the surface peripheral area 10E and on the end face 10C. TheFPM supplied to the vicinity of the back center P2 of the wafer 10 movesoutward to be dropped therefrom, removing the polishing waste 48existing on the back 10B. Thus, the surface peripheral area 10E, the endface 10C, and the back 10B of the wafer 10 are fully cleaned withoutdamaging the device area 10D. The state at this stage is shown in FIG.14F.

After the CMP process is completed, the wafer 10 may be entirely cleanedin an additional process step by immersing entirely the wafer 10 into acleaning solution or by brushing the wafer 10.

Sixth Embodiment

FIGS. 15A to 15F show the steps of a Cu wiring line formation processusing the damascene process, respectively, which includes an etchingmethod and a cleaning method according to a sixth embodiment. In thisprocess, any one of the above-explained etching/cleaning apparatusesaccording to the first to third embodiments is used.

In the sixth embodiment, unlike the fifth embodiment, both the barriermetal film 38 and the seed Cu film 40 are formed to partially cover theback 10B of the wafer 10. Similar to the fifth embodiment, the peripheryof the area 10D is shifted outward compared with the fourth embodiment,thereby expanding the device area 14D and decreasing the width of thesurface peripheral area 10E.

In the step S1 of FIG. 11, as shown in FIG. 15A, a SiO₂ film 34 isformed on the surface 10A of the Si wafer 10 by a known method. The SiO₂film 34 is formed to cover the whole device area 10D and to protrudeslightly from the area 10D. Thus, the periphery of the SiO₂ film 34 islocated in the surface peripheral area 10E. In this embodiment, thewidth of the surface peripheral area 10E is set as approximately 2 mm.

Then, wiring trenches 36 are formed in the SiO₂ film 34 to be located inthe device area 10D by a known method. The state at this stage is shownin FIG. 15A.

In the step S2, as shown in FIG. 15B, a barrier metal film 38, which ismade of Ta, TaN, or TaO_(x), is formed on the SiO₂ film 34 to cover thetrenches 36 by sputtering. Subsequently, a seed Cu film 40 is formed onthe barrier metal film 38 to cover the trenches 36 by sputtering. Thestate at this stage is shown in FIG. 15B.

As seen from FIG. 15B, both the barrier metal film 38 and the seed Cufilm 40 extend to the back 10B of the wafer 10. This state may be causedby sputtering without the shield ring 33 and setting the width of thesurface peripheral area 10E as very short.

In the step S3, an O-ring (not shown) is placed on the seed Cu film 40to form a space on the film 40. Then, a proper plating liquid orsolution is supplied to the space to form a wiring Cu film 42 on thefilm 40 by electroplating, as shown in FIG. 15C.

At this stage, due to the leakage of the plating liquid, an unnecessaryCu film 44 is additionally formed on the seed Cu film 40 in theperipheral area 10E.

In the step S4, using the above-explained etching/cleaning apparatusaccording to the first, second, or third embodiment, the wafer 10 isrotated in a horizontal plane. Next, pure water is emitted from thesurface nozzle 14 toward the surface center P1 of the rotating wafer 10,covering the whole device area 10D. At the same time as this, FPM isemitted from the edge nozzle 18 toward the edge of the wafer 10,contacting the FPM with the whole surface peripheral area 10E. Moreover,FPM is emitted from the back nozzle 16 toward the back center P2 of thewafer 10, contacting the FPM with the whole back 10B. Thus, theundesired Cu film 44 existing in the surface peripheral area 10E, on theend face 10C, and in the back peripheral area 10F is entirely removedand at the same time, the seed Cu film 40 located outside the devicearea 10D is entirely removed.

To remove the barrier metal film 38 made of Ta, TaN, or TaO_(x),hydrofluoric acid (HF) is used instead of FPM as the etching liquidL_(E). Subsequently, the barrier metal film 38 located outside thedevice area 10D is removed in the same way as that of the Cu films 40and 44. The state at this stage is shown in FIG. 15D.

In the step S5, the remaining wiring Cu film 42 is annealed by a knownmethod, thereby improving the quality of the film 42.

In the step S6, to selectively remove the wiring Cu film 42, the seed Cufilm 40, and the barrier metal film 38 protruding from the trench 36 inthe SiO₂ film 34, a CMP process is carried out. Thus, as shown in FIG.15E, Cu wiring lines 46 are formed in the trenches 36 and at the sametime, the seed Cu film 40 and the barrier metal film 38 are left in thetrenches 36.

Through this CMP process, a polishing waste 48 is attached on thesurface 10A in the peripheral area 10E, on the end face 10C, and on theback 10B of the wafer 10, as shown in FIG. 15E.

In the step S7, the polishing waste 48 is removed using theabove-explained etching/cleaning apparatus according to the first,second, or third embodiment. Specifically, first, the wafer 10 is heldon the wafer-holding mechanism. Next, while the wafer 10 is rotated in ahorizontal plane, pure water is emitted from the surface nozzle 14toward the surface center P1 of the wafer 10, covering the whole devicearea 10D. At the same time as this, FPM is emitted from the edge nozzle18 toward the edge of the wafer 10 to be contacted with the wholesurface peripheral area 10E while FPM is emitted from the back nozzle 16toward the back center P2 of the wafer 10 to be contacted with the wholeback 10B. Thus, the surface peripheral area 10E, the end face 10C, andthe back 10B of the wafer 10 are fully cleaned. The state at this stageis shown in FIG. 15F.

In the above-explained fourth to sixth embodiments, the Cu wiring lines46 are formed in the trenches 36 of the SiO₂ film 34. However, thepresent invention is not limited thereto. It can be applied to any caseif at least one of the etching and cleaning processes for asemiconductor wafer is necessary. For example, the invention may beapplied to the case where metal wiring lines or metal electrodes made ofPt, Ir, IrO, or the like, are formed on a dielectric film. Also, theinvention may be applied to the case where a ferroelectric film made ofBST, PZT, or the like, is formed on another film.

While the preferred forms of the present invention have been described,it is to be understood that modifications will be apparent to thoseskilled in the art without departing from the spirit of the invention.The scope of the present invention, therefore, is to be determinedsolely by the following claims.

1. An etching apparatus comprising: a rotating means for holding asemiconductor wafer and for rotating said wafer in a horizontal plane,wherein said wafer comprises a device area and a surface peripheral areaon a first surface, said surface peripheral area being located outsidesaid device area; and an edge nozzle for emitting an etching liquidtoward the surface peripheral area of said wafer, wherein said etchingliquid emitted from said edge nozzle selectively etches out anunnecessary material existing in said surface peripheral area of saidwafer, wherein said etching liquid emitted from said edge nozzle has anemission direction oriented along a rotation direction of said wafer oroutward with respect to a tangent of said wafer formed near a contactpoint of said liquid with said surface peripheral area of said wafer,and wherein said rotating means is of a pin-chucking type comprisingfirst pins and second pins supported by a supporting member; said firstpins and said second pins are alternately arranged along an end face ofsaid wafer; and said first pins and said second pins are alternativelycontacted with said end face of said wafer to hold said wafer and rotatesaid wafer synchronously with said member.
 2. An etching apparatuscomprising: a rotating means for holding a semiconductor wafer and forrotating said wafer in a horizontal plane, wherein said wafer comprisesa device area and a surface peripheral area on a first surface, saidsurface peripheral area being located outside said device area; and anedge nozzle for emitting an etching liquid toward the surface peripheralarea of said wafer, wherein said etching liquid emitted from said edgenozzle selectively etches out an unnecessary material existing in saidsurface peripheral area of said wafer, wherein said etching liquidemitted from said edge nozzle has an emission direction oriented along arotation direction of said wafer or outward with respect to a tangent ofsaid wafer formed near a contact point of said liquid with said surfaceperipheral area of said wafer, and wherein said rotating means comprisesfirst pins and second pins supported by a supporting member; said firstpins are arranged along an end face of said wafer and said second pinsare arranged along said end face of said wafer; during a first period,said first pins contact said end face of said wafer to hold said waferand rotate said wafer synchronously with said member, and said secondpins do not contact said wafer; and during a second period, said secondpins contact said end face of said wafer to hold said wafer and rotatesaid wafer synchronously with said member, and said first pins do notcontact said wafer.
 3. A cleaning apparatus comprising: a rotating meansfor holding a semiconductor wafer and for rotating said wafer in ahorizontal plane, wherein said wafer comprises a device area and asurface peripheral area on a first surface, said surface peripheral areabeing located outside said device area; and an edge nozzle for emittinga cleaning liquid toward the surface peripheral area of said wafer,wherein said cleaning liquid emitted from said edge nozzle selectivelyremoves an unnecessary material existing in said surface peripheral areaof said wafer, wherein said cleaning liquid emitted from said edgenozzle has an emission direction oriented along a rotation direction ofsaid wafer or outward with respect to a tangent of said wafer formednear a contact point of said liquid with said surface peripheral area ofsaid wafer, and wherein said rotating means is of a pin-chucking typecomprising first pins and second pins supported by a supporting member;said first pins and said second pins are alternately arranged along anend face of said wafer; and said first pins and said second pins arealternatively contacted with said end face of said wafer to hold saidwafer and rotate said wafer synchronously with said member.
 4. Acleaning apparatus comprising: a rotating means for holding asemiconductor wafer and for rotating said wafer in a horizontal plane,wherein said wafer comprises a device area and a surface peripheral areaon a first surface, said surface peripheral area being located outsidesaid device area; and an edge nozzle for emitting a cleaning liquidtoward the surface peripheral area of said wafer, wherein said cleaningliquid emitted from said edge nozzle selectively removes an unnecessarymaterial existing in said surface peripheral area of said wafer, whereinsaid cleaning liquid emitted from said edge nozzle has an emissiondirection oriented along a rotation direction of said wafer or outwardwith respect to a tangent of said wafer formed near a contact point ofsaid liquid with said surface peripheral area of said wafer, and whereinsaid rotating means comprises first pins and second pins supported by asupporting member; said first pins are arranged along an end face ofsaid wafer and said second pins are arranged along said end face of saidwafer; during a first period, said first pins contact said end face ofsaid wafer to hold said wafer and rotate said wafer synchronously withsaid member, and said second pins do not contact said wafer; and duringa second period, said second pins contact said end face of said wafer tohold said wafer and rotate said wafer synchronously with said member,and said first pins do not contact said wafer.